• Part: C3D10065I
  • Description: Silicon Carbide Schottky Diode
  • Category: Diode
  • Manufacturer: Cree
  • Size: 518.18 KB
Download C3D10065I Datasheet PDF
Cree
C3D10065I
C3D10065I is Silicon Carbide Schottky Diode manufactured by Cree.
Features Package IF (TC=125˚C) = 10 A Qc = 25 n C - - - - - - 650-Volt Schottky Rectifier Ceramic Package provides 2.5k V isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits - - - - - Electrically Isolated Package Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 CASE Applications - - HVAC Switch Mode Power Supplies Part Number Package Isolated TO-220-2 Marking Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter VRRM VRSM VDC IF Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Value 650 650 650 Unit Test Conditions Note 19 10 8.5 28.6 17.7 80 70 60 26 -55 to +175 -55 to +150 1 8.8 TC=25˚C TC=125˚C TC=135˚C TC=25˚C, t P=10 ms, Half Sine pulse TC=110˚C, t P=10 ms, Half Sine pulse TC=25˚C, t P=10 ms, Half Sine pulse TC=110˚C, t P=10 ms, Half Sine pulse TC=25˚C TC=110˚C IFRM IFSM Ptot TJ Tstg, Tc Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation Operating Junction Range Storage Temperature and Case Temperature TO-220 Mounting Torque A A W ˚C ˚C Nm lbf-in M3 Screw 6-32...