TIP111 Datasheet | Comset Semiconductors

SEMICONDUCTORS NPN TIP110-111-112 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP plements are TIP115-116-117 pliance to Ro HS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 Value 60 80 100 60 80 100 5 Unit VCEO Collector-Emitter Voltage http://..net/ VEBO Emitter-Base Voltage Collector Current Collector Peak Current Base Current 50 m A @ Tc < 25° PT Power Dissipation @ Ta < 25° 50 Watts 2 Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range 05/10/2012 SET SEMICONDUCTORS 1 |3 datasheet pdf - http://..net/ SEMICONDUCTORS NPN TIP110-111-112 THERMAL CHARACTERISTICS...