TIC126A Datasheet | Comset Semiconductors

SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS - - - - - - 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 m A pliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://..net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width ≤300 µs) Peak power dissipation (pulse width ≤300 µs) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Unit M S N V V A A A A W W °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 30/10/2012 SET SEMICONDUCTORS 1|4 datasheet pdf - SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Ratings Gate-controlled VAA = 30 V, RL = 6 Ω Turn-on time RGK(eff) = 100 Ω, Vin = 20 V Circuit-municated VAA = 30 V, RL = 6 Ω Turn-off time IRM ≈ 10 A Junction to case thermal resistance Junction to free air thermal resistance Value Unit µs 11 ≤ 2.4 ≤ 62.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM IRRM IGT Ratings Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Test Condition(s) http://..net/ Min -...