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TIC108D - SILICON CONTROLLED RECTIFIERS

Download the TIC108D datasheet PDF. This datasheet also covers the TIC108 variant, as both devices belong to the same silicon controlled rectifiers family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (TIC108_ComsetSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TIC108D
Manufacturer Comset Semiconductors
File Size 250.78 KB
Description SILICON CONTROLLED RECTIFIERS
Datasheet download datasheet TIC108D Datasheet

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Other Datasheets by Comset Semiconductors

Part Number Description
TIC108 SILICON CONTROLLED RECTIFIERS
TIC108A SILICON CONTROLLED RECTIFIERS
TIC108B SILICON CONTROLLED RECTIFIERS
TIC108C SILICON CONTROLLED RECTIFIERS
TIC108E SILICON CONTROLLED RECTIFIERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTORS TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S SILICON CONTROLLED RECTIFIERS • • • • • • 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 1 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Notes: 1. 2. 3. 4. 5. 21/06/2012 Page 1 of 3 These values apply when the gate-cathode resistance RGK = 1kΩ These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C.
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