TIC108 Datasheet | Comset Semiconductors

SEMICONDUCTORS TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S SILICON CONTROLLED RECTIFIERS - - - - - - 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 1 m A pliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Notes: 1. 2. 3. 4. 5. 21/06/2012 Page 1 of 3 These values apply when the gate-cathode resistance RGK = 1kΩ These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. This value applies for a maximum averaging time of 20 ms. http://..net/ Symbol Ratings B C Unit M S N V V A A A A W W °C °C °C Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Repetitive peak reverse voltage 100 200 300 400 500 600 700 800 Continuous on-state current at (or below) 5 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature 3.2 (see Note3) Surge on-state current (see Note4) 20 Peak positive gate current (pulse width 0.2 ≤300 µs) Peak power dissipation (pulse width ≤300 1.3 µs) Average gate power dissipation (see 0.3 Note5) Operating case temperature range -40 to +110 Storage temperature range -40 to +125 Lead temperature 1.6 mm from case for 10 230 seconds datasheet pdf - http://..net/ SEMICONDUCTORS TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Ratings Gate-controlled VAA = 30 V, RL = 6 Ω, RGK(eff) = 5 kΩ, Turn-on time Vin =...