BD245C Datasheet | Comset Semiconductors

BD245 - A - B - C NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The plementary is BD246, A, B, C pliance to Ro HS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C IC ICM Tmb = 25° C Value 45 60 80 100 55 70 90 115 5.0 10 15 3 80 -65 to +150 -65 to +150 Unit VCEO Collector-Emitter Voltage (IC = -30m A) .Data Sheet.net/ VCER VEBO IC IB PT TJ TS Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature V V A A Watts °C THERMAL CHARACTERISTICS Symbol Rth JC Rth JA Ratings Junction to Case Thermal Resistance Junction to free air Thermal Resistance Value 1.56 42 Unit °C / W °C / W 22/10/2012 SET SEMICONDUCTORS 1/3 Datasheet pdf - http://..co.kr/ BD245 - A - B - C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test...