182T2 Datasheet | Comset Semiconductor

BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TStg Collector-Emitter Voltage Ratings .Data Sheet.net/ Value BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 181T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 Unit V V V A A Watts Collector-Base Voltage 60 90 140 60 100 200 10 6 3 Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25° 87.5 200 -65 to +200 °C SET SEMICONDUCTORS 1/4 Datasheet pdf - http://..co.kr/ BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 THERMAL CHARACTERISTICS Symbol Rth J-C Ratings Thermal Resistance, Junction to Case BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 Value Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (- ) Test Condition(s) BDY23, 180T2 Min Typ Mx Unit 60 90 140 60 100 200 - 1.0 m A V...