CD4454
CD4454 is SWITCHING DIODE CHIPS manufactured by Compensated Deuices Incorporated.
- IN4148 AVAILABLE IN JANHC AND JANKC
- SWITCHING DIODE CHIPS
- ALL JUNCTIONS PLETELY PROTECTED WITH SILICON DIOXIDE
- PATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES WITH THE EXCEPTION OF SOLDER REFLOW
CD4148 CD914 CD3600 CD4150 CD4153 CD4454
MAXIMUM RATINGS
Operating Temperature: -55°C to +175°C Storage Temperature: -65°C to +175°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
VBR @100 µ A Volts (min) CD914 CD4148 CD4454 100 100 75 VRWM IO VF1 @IF = 10m A Vdc 0.8 0.8 1.0 VF2 @IF = 50m A Vdc 1.2 N/A N/A VF3 @IF = 100m A Vdc N/A 1.2 N/A t rr
TYPE
Volts (pk) 75 75 50 m A 75 200 200 n sec 5 5 4
BACKSIDE IS CATHODE
TYPE IR1 @20Vdc n A CD914 CD4148 CD4454 25 25 N/A IR2 IR3 @20Vdc TA+150°C IR4 TA+150°C µA@V 75 @ 75 75 @ 75 100 @ 50 CAPACITANCE @OV p F 4.0 4.0 2.0 CAPACITANCE @1.5V p F 2.8 2.8 N/A
FIGURE 1
µA@V
0.5 @ 75 0.5 @ 75 0.1 @ 50
µA
35 35 N/A
VBR TYPE IR = 10 µ A- VOLTS (MIN) CD3600 CD4150 CD4153 75 75 75-
VRWM
I R1 VR = 50 Vdc TA = 25˚C µ A dc 0.10 0.10 0.05
V (pk) 50 50 50
I R2 VR = 50 Vdc TA = 150˚C µ A dc 100 100 50
C VR = 0:f = 1 Mhz; ac signals = 50m V (p-p) p F 2.5 2.5 2.0 trr
DESIGN DATA
METALLIZATION: Top: (Anode) ....................Al Back: (Cathode)..............Au AL THICKNESS ............25,000 Å Min GOLD THICKNESS ........4,000 Å Min ns 4 4 4
- @5 µ A for CD4153 FORWARD VOLTAGE LIMITS
- CD3600 and CD4150
CHIP THICKNESS ..................10 Mils
LIMITS VF1 IF = 1m A dc V dc minimum maximum 0.540 0.620 VF2 IF = 10m A dc V dc 0.680 0.740 VF3 VF4 VF5 IF = 50m A dc IF = 100m A dc IF = 200m A dc (Pulsed) (Pulsed) (Pulsed) V dc V dc V dc 0.780 0.860 0.820 0.920 0.870 1.000
TOLERANCES: ALL Dimensions ± 2...
