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Compensated Deuices Incorporated

CD2810 Datasheet Preview

CD2810 Datasheet

SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION

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• 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444
• 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445
• SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION
• SILICON DIOXIDE PASSIVATED
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -65°C to +150°C
CD2810
CD5711
CD5712
CD6857
CD6858
CD6916
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
CDI
TYPE
NUMBER
CD2810
CD5711
CD5712
CD6857
CD6858
CD6916
MINIMUM
BREAKDOWN
VOLTAGE
(2)
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
VBR @ 10 µ A VF @ 1 mA
VF @ IF
VOLTS
VOLTS VOLTS @ mA
20 0.41 1.0 @ 35
70 0.41 1.0 @15
20 0.41 1.0 @ 35
20 0.35 0.75 @ 35
70 0.36 0.65 @ 15
0.27 @ 0.1
40 0.34 0.34 @ 1.0
(2) 0.47 @ 10.0
MAXIMUM REVERSE
LEAKAGE CURRENT
MAXIMUM
FIGURE
CAPACITANCE @
V R = 0 VOLTS NUMBER
f = 1.0 MHZ
1R @ VR
nA VOLTS
100 15
200 50
150 16
150 16
200 50
100 1
200 20
500 40
CT
PICO FARADS
1.2
2.0
1.2
4.5
4.5
5
1
2
1
2
2
2
NOTES: (1) Effective Minority Carrier Lifetime (τ) is 100 Pico Seconds
(2) CD6916 V BR measured @ 500 nanoamps
BACKSIDE IS CATHODE
FIGURE 1
BACKSIDE IS CATHODE
FIGURE 2
DESIGN DATA
METALLIZATION:
Top: (Anode)...................... ..Al
Back: (Cathode)................. Au
o
AL THICKNESS.................25,000 A Min
o
GOLD THICKNESS... ..........4,000 A Min
CHIP THICKNESS............. .........10 Mils
TOLERANCES: ALL Dimensions
+ 2 mils, Except Anode Pad Where
Tolerance is + 0.5 mils.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com




Compensated Deuices Incorporated

CD2810 Datasheet Preview

CD2810 Datasheet

SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION

No Preview Available !

CD2810, CD5711, CD5712, CD6857, CD6858
and CD6916
100
10
1.0
.1
.01
0
.2 .4 .6 .8 1.0 1.2
VF – FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical Forward
Voltage Variation with Temperature for the
CD5712 and CD2810 Schottky Diodes.
10,000
1000
100
10
1.0
0 5.0 10 15 20 25 30
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
CD5712 and CD2810
Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
50
10
5
1
.5
.1
.05
.01
0
.2 .4 .6
.8 1.0 1.2
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical Forward Voltage
Variation with Temperature for Schottky Diode
CD5711.
100,000
10,000
1000
100
10
1
0 10 20 30 40 50 60
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
CD5711 Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
1000
100
10
1
.1 1.0 10
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical DynamiC Resistance (RD) vs.
Forward Current (IF).
100


Part Number CD2810
Description SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION
Maker Compensated Deuices Incorporated
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