-Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. Diagram:
Collector 3
1 Base
Marking: 2L
2 Emitter
0.056(1.40) 0.047(1.20)
0.041(1.05) 0.035(0.90)
SOT-23
0.119(3.00) 0.110(2.80)
3
12
0.079(2.00) 0.071(1.80)
0.006(0.15) 0.002(0.05)
0.100(2.55) 0.089(2.25)
0.020(0.50) 0.012(0.30)
0.004(0.10) max 0.008(0.20) min
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted).
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General Purpose Transistor
MMBT5401-G (PNP)
RoHS Device
Features
-Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching.
Diagram:
Collector 3
1 Base
Marking: 2L
2 Emitter
0.056(1.40) 0.047(1.20)
0.041(1.05) 0.035(0.90)
SOT-23
0.119(3.00) 0.110(2.80)
3
12
0.079(2.00) 0.071(1.80)
0.006(0.15) 0.002(0.05)
0.100(2.55) 0.089(2.25)
0.020(0.50) 0.012(0.30)
0.004(0.10) max 0.008(0.
MMBT5401-G Datasheet
