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CDBJSC101700-G - Silicon Carbide Power Schottky Diode

Key Features

  • - Rated to 1700V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 pin 0.116(2.95) 0.104(2.65) 0.409(10.40) 0.394(10.00) 0.311(7.90) 0.303(7.70) 0.152(3.85) 0.148(3.75) 0.646(16.40) Max. 0.620(15.75) 0.600(15.25) 0.181(4.60) 0.173(4.40) 0.052(1.32) 0.048(1.23) 0.260(6.60) 0.244(6.20).

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Datasheet Details

Part number CDBJSC101700-G
Manufacturer Comchip
File Size 98.23 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBJSC101700-G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide Power Schottky Diode CDBJSC101700-G Reverse Voltage: 1700 V Forward Current: 10 A RoHS Device Features - Rated to 1700V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 pin 0.116(2.95) 0.104(2.65) 0.409(10.40) 0.394(10.00) 0.311(7.90) 0.303(7.70) 0.152(3.85) 0.148(3.75) 0.646(16.40) Max. 0.620(15.75) 0.600(15.25) 0.181(4.60) 0.173(4.40) 0.052(1.32) 0.048(1.23) 0.260(6.60) 0.244(6.20) 0.067(1.70) 0.045(1.14) 0.155(3.93) 0.138(3.50) 0.551(14.00) 0.512(13.00) 0.107(2.72) 0.094(2.40) 0.035(0.88) 0.024(0.61) 0.203(5.15) 0.195(4.95) 0.028(0.70) 0.019(0.