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Silicon Carbide Power Schottky Diode
CDBJSC101200-G
Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device
Features
- Rated to 1200V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220-2
0.116(2.95) 0.104(2.65)
0.409(10.40) 0.394(10.00)
0.311(7.90) 0.303(7.70)
0.152(3.85) 0.148(3.75)
0.646(16.40) Max.
0.620(15.75) 0.600(15.25)
0.181(4.60) 0.173(4.40)
0.052(1.32) 0.048(1.23)
0.260(6.60) 0.244(6.20)
0.067(1.70) 0.045(1.14)
0.155(3.93) 0.138(3.50)
0.551(14.00) 0.512(13.00)
0.107(2.72) 0.094(2.40)
0.035(0.88) 0.024(0.61)
0.203(5.15) 0.195(4.95)
0.028(0.70) 0.019(0.
CDBJSC101200-G Datasheet
