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CDBJFSC10650-G - Silicon Carbide Power Schottky Diode

Key Features

  • - Rated to 650V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85) 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.264(6.70) 0.248(6.30) 0.039(1.00) 0.024(0.60) 0.055(1.40) 0.043(1.10) 0.031(0.80) 0.020(0.50) 0.602(15.30) 0.587(14.90) 0.154(3.90) 0.130(3.30) 0.5.

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Datasheet Details

Part number CDBJFSC10650-G
Manufacturer Comchip
File Size 108.53 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBJFSC10650-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide Power Schottky Diode CDBJFSC10650-G Reverse Voltage: 650 V Forward Current: 10 A RoHS Device Features - Rated to 650V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85) 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.264(6.70) 0.248(6.30) 0.039(1.00) 0.024(0.60) 0.055(1.40) 0.043(1.10) 0.031(0.80) 0.020(0.50) 0.602(15.30) 0.587(14.90) 0.154(3.90) 0.130(3.30) 0.539(13.70) 0.516(13.10) 0.201(5.10) 0.100(2.55) 0.126(3.20) 0.118(3.00) 0.185(4.70) 0.173(4.40) 0.110(2.80) 0.098(2.50) 0.031(0.80) 0.020(0.