Datasheet4U Logo Datasheet4U.com

CDBGBSC20650-G - Dual Silicon Carbide Power Schottky Diode

Key Features

  • - Rated to 650V at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(4) A(1) A(3) C(2) 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26) 0.620(15.75) 4 0.209(5.30) 0.185(4.70) 0.144(3.65) 0.140(3.55) 0.216(5.49) 0.170(4.32) 1 23 0.177(4.50) MAX. 0.800(20.32) 0.780(19.81) 0.084(2.13) 0.065(1.65).

📥 Download Datasheet

Datasheet Details

Part number CDBGBSC20650-G
Manufacturer Comchip
File Size 70.65 KB
Description Dual Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBGBSC20650-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CDBG820-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode Comchip Technology
CDBG830-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode Comchip Technology
CDBG840-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode Comchip Technology
CDBG850-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode Comchip Technology
CDBG860-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode Comchip Technology

Other Datasheets by Comchip

Part Number Description
CDBGBSC201200-G Dual Silicon Carbide Power Schottky Diode
CDBGBSC101200-G Dual Silicon Carbide Power Schottky Diode
CDBA1100-G SMD Schottky Barrier Rectifiers
CDBA1100-HF SMD Schottky Barrier Rectifiers
CDBA1100-HF SMD Schottky Barrier Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Dual Silicon Carbide Power Schottky Diode CDBGBSC20650-G Reverse Voltage: 650V Forward Current: 20A RoHS Device Features - Rated to 650V at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(4) A(1) A(3) C(2) 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26) 0.620(15.75) 4 0.209(5.30) 0.185(4.70) 0.144(3.65) 0.140(3.55) 0.216(5.49) 0.170(4.32) 1 23 0.177(4.50) MAX. 0.800(20.32) 0.780(19.81) 0.084(2.13) 0.065(1.65) 0.433(11.00) 0.425(10.80) 0.055(1.40) 0.039(1.00) Dimensions in inches and (millimeter) 0.031(0.80) 0.016(0.40) 0.098(2.49) 0.059(1.