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CDBGBSC201200-G - Dual Silicon Carbide Power Schottky Diode

Key Features

  • - Rated to 1200 at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26) 0.620(15.75) 4 0.209(5.30) 0.185(4.70) 0.144(3.65) 0.140(3.55) 0.216(5.49) 0.170(4.32) 1 23 0.177(4.50) MAX. Circuit diagram C(4) A(1) A(3) C(2) 0.800(20.32) 0.780(19.81) 0.084(2.13) 0.065(1.65.

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Datasheet Details

Part number CDBGBSC201200-G
Manufacturer Comchip
File Size 70.09 KB
Description Dual Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBGBSC201200-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual Silicon Carbide Power Schottky Diode CDBGBSC201200-G Reverse Voltage: 1200V Forward Current: 20A RoHS Device Features - Rated to 1200 at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26) 0.620(15.75) 4 0.209(5.30) 0.185(4.70) 0.144(3.65) 0.140(3.55) 0.216(5.49) 0.170(4.32) 1 23 0.177(4.50) MAX. Circuit diagram C(4) A(1) A(3) C(2) 0.800(20.32) 0.780(19.81) 0.084(2.13) 0.065(1.65) 0.433(11.00) 0.425(10.80) 0.055(1.40) 0.039(1.00) Dimensions in inches and (millimeter) 0.031(0.80) 0.016(0.40) 0.098(2.49) 0.059(1.