CDBDSC10650-G - Silicon Carbide Power Schottky Diode
Comchip
Key Features
- Rated to 650V at 10 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF
Circuit Diagram
C(3)
C(1) A(2)
0.409(10.40) 0.394(10.00)
0.244(6.20) 0.236(6.00)
D-PAK(TO-252)
0.264(6.70) 0.256(6.50)
0.215(5.46) 0.201(5.10)
3
Φ 0.051(1.30) 0.043(1.10)
12
0.023(0.58) 0.018(0.46)
0.012(0.30) Max. 0.091(2.32) 0.089(2.28)
0.093(2.37) 0.085(2.16).
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Silicon Carbide Power Schottky Diode
CDBDSC10650-G
Reverse Voltage: 650 V Forward Current: 10 A RoHS Device
Features
- Rated to 650V at 10 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF
Circuit Diagram
C(3)
C(1) A(2)
0.409(10.40) 0.394(10.00)
0.244(6.20) 0.236(6.00)
D-PAK(TO-252)
0.264(6.70) 0.256(6.50)
0.215(5.46) 0.201(5.10)
3
Φ 0.051(1.30) 0.043(1.10)
12
0.023(0.58) 0.018(0.46)
0.012(0.30) Max.
0.091(2.32) 0.089(2.28)
0.093(2.37) 0.085(2.16)
0.034(0.86) 0.026(0.66)
0.090(2.29) 0.035(0.89)
0.114(2.90) 0.100(2.55)
0.023(0.58) 0.016(0.
CDBDSC10650-G Datasheet
