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CDBD2SC21200-G - Silicon Carbide Power Schottky Diode

Key Features

  • - Rated to 1200V at 2 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(3) C(1) A(2) TO-263/D2PAK 0.402(10.20) 0.394(10.00) 3 0.051(1.30) 0.043(1.10) 0.596(15.15) 0.585(14.85) 0.346(8.80) 0.339(8.60) 12 0.205(5.20) 0.197(5.00) 0.049(1.25) 0.045(1.15) 0.037(0.95) 0.033(0.85) 0.063(1.60) 0.055(1.40) 0.185(4.70) 0.177(4.

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Datasheet Details

Part number CDBD2SC21200-G
Manufacturer Comchip
File Size 98.12 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBD2SC21200-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide Power Schottky Diode CDBD2SC21200-G Reverse Voltage: 1200V Forward Current: 2A RoHS Device Features - Rated to 1200V at 2 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(3) C(1) A(2) TO-263/D2PAK 0.402(10.20) 0.394(10.00) 3 0.051(1.30) 0.043(1.10) 0.596(15.15) 0.585(14.85) 0.346(8.80) 0.339(8.60) 12 0.205(5.20) 0.197(5.00) 0.049(1.25) 0.045(1.15) 0.037(0.95) 0.033(0.85) 0.063(1.60) 0.055(1.40) 0.185(4.70) 0.177(4.50) 0.054(1.37) 0.046(1.17) 0.107(2.72) 0.091(2.32) 0.019(0.47) 0.014(0.