Download the 1N5230B-G datasheet PDF.
This datasheet also covers the 1N5221B-G variant, as both devices belong to the same glass silicon zener diode family and are provided as variant models within a single manufacturer datasheet.
Key Features
-Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes
DO-35
1.02(26.00) Min. Mechanical data
-Case: Molded plastic, DO-35 -Terminals : Solderable per MIL-STD-750,Method
Method 2026 -Polarity: Indicated by cathode band -Marking: Type number -Weight: 0.13gram
0.079(2.00)Max. 0.165(4.20)Max. 1.02(26.00) Min. 0.020(0.52)Typ. Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
(TA=25°C, unless otherwise noted)
Param.
Full PDF Text Transcription for 1N5230B-G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
1N5230B-G. For precise diagrams, and layout, please refer to the original PDF.
Glass Silicon Zener Diode 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Comchip SMD Diode Specialist Features -Planar Die Construction -...
View more extracted text
evice Comchip SMD Diode Specialist Features -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes DO-35 1.02(26.00) Min. Mechanical data -Case: Molded plastic, DO-35 -Terminals : Solderable per MIL-STD-750,Method Method 2026 -Polarity: Indicated by cathode band -Marking: Type number -Weight: 0.13gram 0.079(2.00)Max. 0.165(4.20)Max. 1.02(26.00) Min. 0.020(0.52)Typ.