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Document 561
SMT Gate Drive Transformer
• Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz.
• 2250 Vdc, one minute primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their
POE+PHYTEREV-I/-E evaluation boards. • SpecifiedontheMicrosemiPD70211EVB51F-12evaluationboard Core material Ferrite Terminations RoHS compliant tin-silver over tin over nickel over phos bronze Weight 700 mg Ambient temperature –40°C to +125°C Storage temperature Component: –40°C to +125°C.