TO252 / TO251 Pin Configuration Low gate charge (typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100%avalanche tested Improved dv/dt capability D G S TO252 G.

These N-Channel enhancement mode power field effect transistors are produced using advanced technology which has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

CMU5N60

CMU50N06

CMU50N06B

CMU50P03

CMU510J

CMU560J

CMU04N03

CMU050C

CMU06N02N

CMU06N03

CMU100D

CMU101J

CMU120J

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