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CMN2309 Datasheet, Cmos

CMN2309 transistor equivalent, p-channel enhancement mode field effect transistor.

CMN2309 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 768.65KB)

CMN2309 Datasheet

Features and benefits

RDS(ON)<250mΩ @ VGS=-10V RDS(ON)<300mΩ @ VGS=-4.5V Fast switching speed Surface mount package Absolute Maximum Ratings Product Summery BVDSS -60V RDSON 250m ID -1.6A .

Application

Features RDS(ON)<250mΩ @ VGS=-10V RDS(ON)<300mΩ @ VGS=-4.5V Fast switching speed Surface mount package Absolute Maximum.

Description

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. Features RDS(ON)<250mΩ @ VGS=-10V RDS(ON)<300mΩ @ VGS=-4.5V Fast swi.

Image gallery

CMN2309 Page 1 CMN2309 Page 2

TAGS

CMN2309
P-Channel
Enhancement
Mode
Field
Effect
Transistor
Cmos

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