CMH20N50
Electrical Characteristics (TJ=25 , unless otherwise noted)
500V N-Channel MOSFET
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance 3
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=250uA
VGS=10V , ID=10A
Min.
500
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Typ.
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0.5
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Max.
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0.26
Unit
V
V/
VGS=VDS , ID =250uA
2
VDS=500V, VGS=0V
VDS=400V , VGS=0V , TC=125℃
VGS 30V , VDS=0V
VDS=40V , ID=10A
ID=20A
VDS =400V
VGS =10V
(Note 3, 4)
V DS =250V
ID=20A
R G=25Ω
(Note 3, 4)
VDS=25V , VGS=0V , f=1MHz
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24
52
18
26
88
270
105
117
2500
380
35
4V
1
uA
10
100 nA
--- S
69
--- nC
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--- ns
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--- pF
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Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=20 A , TJ=25
Note :
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.L = 4.1mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25℃
3.Pulse Test: Pulse width≤300μs, Duty Cycle≤2%
4.Essentially Independent of Operating Temperature Typical Characteristics
Min.
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Typ.
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Max.
20
60
1.4
Unit
A
A
V
2
