* RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.8A
* Extremely high dv/dt capablity
* Very high commutation ruggedness
* Extremely low losses due to very low.

Features
* RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.8A
* Extremely high dv/dt capablity
* Very high comm.

The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conven.

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