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ID2006 - High-Side & Low-Side Gate Driver

General Description

The ID2006 is a high voltage, high speed power MOSFET driver with independent high and low side referenced output channels based on P_SUB P_EPI process.

The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V.

Key Features

  • Fully operational to+200 V.
  • 3.3V and 5V input logic compatible.
  • dV/dt Immunity ±50 V/nsec.
  • Gate drive supply range from 6 V to 18 V.
  • Typically Source / Sink current capability 1 A/1 A.
  • Typically -9V negative Vs bias capability Package/Order Information.

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Datasheet Details

Part number ID2006
Manufacturer Chipown
File Size 565.79 KB
Description High-Side & Low-Side Gate Driver
Datasheet download datasheet ID2006 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ID2006 Chipown High-Side & Low-Side Gate Drive IC General description The ID2006 is a high voltage, high speed power MOSFET driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Features  Fully operational to+200 V  3.