PE8350G mosfet equivalent, n-channel power mosfet.
* VDS = 30V, ID = 50A
RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V
Schematic diagram
* High Power and current handing capability
* Lead free product .
PE8350G
General Features
* VDS = 30V, ID = 50A
RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V
Schematic diag.
The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE8350G
General Features
* VDS = 30V, ID = 50A
RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V
S.
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