MX2818 mosfet equivalent, n-channel power mosfet.
* VDS =20V，ID =12A @VGS=-4.5V RDS(ON)(Typ.)=11mΩ
Schematic diagram
@VGS=-3.8V RDS(ON)(Typ.)=12mΩ
@VGS=2.5V RDS(ON)(Typ.)=13mΩ
ESD Rating:2000V HBM
* High pow.
It is ESD protested..
MX2818
General Features
* VDS =20V，ID =12A @VGS=-4.5V RDS(ON)(Typ.)=11mΩ
Schematic diagra.
The MX2818 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM
applications. It is ESD protested..
MX2818
General Fe.
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