* Low FOM RDS(on)×Qgd
* 100% avalanche tested
* Easy to use/drive
* RoHS compliant ek Applications T
* Load Switch rce Key Performance Parameters.

T
* Load Switch rce Key Performance Parameters Parameter Value u VDS@ Tc=25℃ -60 o RDS(on),max@-10V 18 Qg,.

P-Channel Power MOSFET designed by HR-Micro Semiconductor Company,according to the advanced Trench Technology.This device provides an excellent gate charge and Rds(on),which leads to extremely communication and conduction losses. TO-263 TO-251 HRT6.

HRT60P18B

HRT60P18P

HRT60P18U

HR-CR3A

HR-CR3N23

HR-CR7

HR-CR7DC05

HR-CR7DC06

HR-CR7DC09

HR-CR7DC12

HR-CR7DC18

HR-CR7DC24

HR-CR7DC48

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