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Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
N-Ch 20V Fast Switching MOSFETs CST2300A Product Summary
BVDSS 20V
RDSON 19mΩ
ID 6.0A
CST2300A SOT23 Pin Configuration
CST2300A Description
The CST2300A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of
k the small power switching and load switch
applications.
e The CSTR2300A meets the RoHS and
Green Product requirement with full function
T reliability approved.
e CST2300A Absolute Maximum Ratings
Symbol
c VDS r VGS
ID@TA=25℃
u ID@TA=70℃ IDM
o PD@TA=25℃ TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.