AKT2055Q Key Features
- Extremely Low RDS(on): Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A
- Good stability and uniformity
- 100% avalanche tested
- Excellent package for good heat dissipation
| Part Number | Description |
|---|---|
| AKT3080K | 30V N-channel enhancement mode MOSFET |