CED730G/CEU730G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 400V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
400
10
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
VGS = VDS, ID = 250µA
2
4
RDS(on)
VGS = 10V, ID = 3A
0.8 1
V
Ω
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 50V, ID = 5A
6S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
590
105
pF
pF
Crss 20 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 200V, ID = 3.5A,
VGS = 10V, RGEN =12Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 320V, ID =3.5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
15 30 ns
7 14 ns
30 60 ns
5 10 ns
14 18 nC
2.5 nC
6 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 3A
5A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
.
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