CEU630N Features
* 200V, 7.5A, RDS(ON) = 0.36Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED630N/CEU630N D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMU
CEU630N, CEU630N_Chino Datasheet
Datasheet Details
CEU630N, CEU630N_Chino
Chino-Excel Technology
418.00 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: CEU630N, CEU630N_Chino.
Please refer to the document for exact specifications by model.
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