Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor Features
100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G
CED16N10L/CEU16N10L
PRELIMINARY
D G S CEU SERIES TO-252(D-PAK)
S CED SERIES...
