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CEU16N10L Datasheet Preview

CEU16N10L Datasheet

N-Channel MOSFET

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CED16N10L/CEU16N10L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 13.3A, RDS(ON) = 115m@VGS = 10V.
RDS(ON) = 125m@VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
100
±20
13.3
53
43
0.34
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
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Symbol
RθJC
RθJA
Limit
3.5
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2010.Jan.
http://www.cetsemi.com




Chino-Excel Technology

CEU16N10L Datasheet Preview

CEU16N10L Datasheet

N-Channel MOSFET

No Preview Available !

CED16N10L/CEU16N10L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA
VDS = 100, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.5A
VGS = 5V, ID = 5A
VDS = 10V, ID = 6.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 13.3A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 13.3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 13.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d. L=0.5mH, IAS=13.3A, VDD=25V, RG=25Ω, Starting TJ=25 C
Min
100
1
Typ Max Units
1
100
-100
V
µA
nA
nA
3V
95 115 m
100 125 m
5S
630 pF
105 pF
26 pF
11 22 ns
2.7 6 ns
73 150 ns
7.5 15 ns
17 25 nC
2.2 nC
3.5 nC
13.3 A
1.5 V
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2


Part Number CEU16N10L
Description N-Channel MOSFET
Maker Chino-Excel Technology
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CEU16N10L Datasheet PDF






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