CEU02N6G Datasheet | Chino-Excel Technology

FEATURES 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED02N6G/CEU02N6G D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 600 Units V V A A A W W/ C m J A C ±30 2 1.3 8 52 0.4 11.25 1.5 -55 to 150 Single Pulsed Avalanche Current e Operating and Store Temperature Range Thermal Characteristics Parameter Symbol RθJC RθJA Limit 2.4 50 Units C/W C/W .. Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice . 1 Rev 5. 2011.Feb http://.cetsemi. CED02N6G/CEU02N6G Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1A VDS = 480V, ID = 1A, VGS = 10V VDD = 300V, ID = 1A, VGS = 10V, RGEN = 18Ω 19 11 29 10 6.7 1.5 3 1.9 1.5 38 22 58 20 8.9 ns ns ns ns n C n C n C A V Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 295 75 20 p F p F p F VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 1A 2 3.8 4 5 V Ω BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA...