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CEU01N7 Datasheet Preview

CEU01N7 Datasheet

N-Channel MOSFET

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CED01N7/CEU01N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 0.8A, RDS(ON) = 18 @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
700
±30
0.8
3.0
31
0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
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Symbol
RθJC
RθJA
Limit
4
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2011.Jan
http://www.cetsemi.com




Chino-Excel Technology

CEU01N7 Datasheet Preview

CEU01N7 Datasheet

N-Channel MOSFET

No Preview Available !

CED01N7/CEU01N7
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
700
V
1 µA
10 uA
-10 uA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.5A
2
4
16 18
V
Dynamic Characteristics d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
135
45
pF
pF
Crss 20 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 0.4A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V,ID = 0.4A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
19 38 ns
13 26 ns
24 48 ns
35 70 ns
6 7.8 nC
1 nC
4.4 nC
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
Notes :
a.Drain current limited by maximum junction temperature.
b.Repetitive Rating : Pulse width limited by maximum junction temperature.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
VGS = 0V, IS = 0.8A
0.8 A
1.5 V
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2


Part Number CEU01N7
Description N-Channel MOSFET
Maker Chino-Excel Technology
PDF Download

CEU01N7 Datasheet PDF






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