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CEU01N6G Datasheet Preview

CEU01N6G Datasheet

N-Channel MOSFET

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CED01N6G/CEU01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 1A, RDS(ON) = 9.3@VGS = 10V.
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 600
VGS ±30
Drain Current-Continuous
Drain Current-Pulsed a
ID 1
IDM 4
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
31
0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
wwTwh.eDrmataalSRheeseits4taUn.cceo,mJunction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.5
50
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2009.Jul.
http://www.cetsemi.com




Chino-Excel Technology

CEU01N6G Datasheet Preview

CEU01N6G Datasheet

N-Channel MOSFET

No Preview Available !

CED01N6G/CEU01N6G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.6A
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS b
Ciss
Coss
Crss
VDS = 15V, ID = 0.5A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 1A,
VGS = 10V, RGEN = 10
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 300V, ID = 1A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 0.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
600
2
Typ
7.3
210
55
25
20
11
26
18.5
7.2
0.7
4
Max Units
20
100
-100
V
µA
nA
nA
4V
9.3
10 S
pF
pF
pF
26 ns
14.3 ns
33.8 ns
24 ns
9.4 nC
nC
nC
1A
1.5 V
6
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Part Number CEU01N6G
Description N-Channel MOSFET
Maker Chino-Excel Technology
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CEU01N6G Datasheet PDF






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