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CEU01N65A - N-Channel MOSFET

Download the CEU01N65A datasheet PDF. This datasheet also covers the CEU01N65A_Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N65A/CEU01N65A D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEU01N65A_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEU01N65A
Manufacturer Chino-Excel Technology
File Size 418.10 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU01N65A Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N65A/CEU01N65A D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 650 Units V V A A W W/ C C ±30 0.9 3.6 43 0.
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