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CET6426 Datasheet Preview

CET6426 Datasheet

N-Channel MOSFET

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CET6426
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4.5A, RDS(ON) = 90m@VGS = 10V.
RDS(ON) = 110m@VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D
DS
D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 4.5
IDM 18
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
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Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2007.Oct.
http://www.cetsemi.com




Chino-Excel Technology

CET6426 Datasheet Preview

CET6426 Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3A
VGS = 4.5V, ID = 2.4A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 30V, ID = 4.5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
CET6426
Min Typ Max Units
60 V
1 µA
100 nA
-100 nA
1 3V
75 90 m
88 110 m
665 pF
75 pF
40 pF
13 26
48
33 66
36
13.4 17.8
1.7
2.8
ns
ns
ns
ns
nC
nC
nC
4.5 A
1.1 V
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2


Part Number CET6426
Description N-Channel MOSFET
Maker Chino-Excel Technology
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CET6426 Datasheet PDF






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