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CET451AN Datasheet Preview

CET451AN Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CET451AN
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 7.2A, RDS(ON) = 35m@VGS = 10V.
RDS(ON) = 50m@VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D
DS
D
G
SOT-223
DS
G
SOT-223 (J23Z)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 7.2
IDM 25
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
Units
V
V
A
A
W
C
Units
C/W
1998.March
7 - 46
http://www.cetsemi.com




Chino-Excel Technology

CET451AN Datasheet Preview

CET451AN Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CET451AN
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 7.2A
VGS = 4.5V, ID = 6.0A
VDS = 10V, ID = 7.2A
1
4
3V
27 35 m
43 50 m
11 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
500
267
pF
pF
Crss 93 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 7A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 7.2A
12 20 ns
13 30 ns
29 50 ns
10 20 ns
16 21 nC
3 nC
5 nC
2.3 A
1.3 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
7
7 - 47


Part Number CET451AN
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Chino-Excel Technology
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