900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Chino-Excel Technology

CET4435A Datasheet Preview

CET4435A Datasheet

P-Channel MOSFET

No Preview Available !

CET4435A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -8.8A, RDS(ON) = 24m@VGS = -10V.
RDS(ON) = 35m@VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D
DS
D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -30
VGS ±20
ID -8.8
IDM -35
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
www.DataSheet4U.com
Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
7 - 42
Rev 1. 2006.January
http://www.cetsemi.com




Chino-Excel Technology

CET4435A Datasheet Preview

CET4435A Datasheet

P-Channel MOSFET

No Preview Available !

CET4435A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -8.8A
VGS = -4.5V, ID = -5A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
Ciss
Coss
Crss
VDS = -15V, ID = -8.8A
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -4.6A,
VGS = -5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -2.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-30
-1
Typ
20
27
12
2220
550
230
12
6
110
35
22
7
8
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
24 m
35 m
S
pF
pF
pF
24 ns
18 ns
140 ns
70 ns
28 nC
nC
nC
-2.1 A
-1.2 V
5
7
www.DataSheet4U.com
7 - 43


Part Number CET4435A
Description P-Channel MOSFET
Maker Chino-Excel Technology
PDF Download

CET4435A Datasheet PDF






Similar Datasheet

1 CET4435A P-Channel MOSFET
Chino-Excel Technology





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy