CET4435A Key Features
- 30V, -8.8A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 35mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). R
| Part Number | Description |
|---|---|
| CET4401B | P-Channel MOSFET |
| CET4301 | P-Channel MOSFET |
| CET451AN | N-Channel Enhancement Mode Field Effect Transistor |
| CET453N | N-Channel Enhancement Mode Field Effect Transistor |
| CET04N10 | N-Channel MOSFET |