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CET4401B Datasheet Preview

CET4401B Datasheet

P-Channel MOSFET

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CET4401B
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -4.9A, RDS(ON) = 57m@VGS = -10V.
RDS(ON) = 85m@VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D
DS
D
G
G
SOT-223
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -40
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -4.9
IDM -20
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
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Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
1
Rev 1. 2006.January
http://www.cetsemi.com




Chino-Excel Technology

CET4401B Datasheet Preview

CET4401B Datasheet

P-Channel MOSFET

No Preview Available !

CET4401B
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-40
-1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -3.7A
-1
-3 V
57 68 m
85 105 m
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
Ciss
Coss
Crss
VDS = -5V, ID = -4.9A
VDS = -20V, VGS = 0V,
f = 1.0 MHz
7
700
120
70
S
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -20V, ID = -4.2A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
12 25 ns
2 4 ns
30 60 ns
4 8 ns
5.3 7 nC
1.9 nC
2.1 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1A
-4.9 A
-1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5
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Part Number CET4401B
Description P-Channel MOSFET
Maker Chino-Excel Technology
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CET4401B Datasheet PDF






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