Datasheet4U Logo Datasheet4U.com

CET4301 - P-Channel MOSFET

Download the CET4301 datasheet PDF. This datasheet also covers the CET4301_Chino variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -40V, -6.3A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D D D G SOT-223 G S S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CET4301_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CET4301
Manufacturer Chino-Excel Technology
File Size 299.53 KB
Description P-Channel MOSFET
Datasheet download datasheet CET4301 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CET01N65A N-Channel MOSFET CET
CET0215 N-Channel MOSFET CET
CET3301 P-Channel MOSFET CET
CET6601 P-Channel MOSFET CET

Other Datasheets by Chino-Excel Technology

Part Number Description
CET4401B P-Channel MOSFET
CET4435A P-Channel MOSFET
CET451AN N-Channel Enhancement Mode Field Effect Transistor
CET453N N-Channel Enhancement Mode Field Effect Transistor
CET04N10 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CET4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6.3A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D D D G SOT-223 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -40 Units V V A A W C ±20 -6.3 -25 3 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W www.DataSheet4U.com Details are subject to change without notice . 1 Rev 1. 2006.