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CET3055L Datasheet Preview

CET3055L Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CET3055L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4A, RDS(ON) = 85m@VGS = 10V.
RDS(ON) = 100m@VGS = 5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D
DS
D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 4
IDM 16
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
Units
V
V
A
A
W
C
Units
C/W
2009.July
7 - 34
http://www.cetsemi.com




Chino-Excel Technology

CET3055L Datasheet Preview

CET3055L Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CET3055L
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 4A
VGS = 5V, ID = 2A
VDS = 5V, ID = 3.7A
1
3
2V
63 85 m
73 100 m
6S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
400 520
120 155
35 45
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 25V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 3.7A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
9 20 ns
3 5 ns
28 36 ns
4 6 ns
13 17 nC
1.5 nC
3 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 3.7A
4A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
7
7 - 35


Part Number CET3055L
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Chino-Excel Technology
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