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CET3055L, CET3055L_Chino Datasheet - Chino-Excel Technology

CET3055L N-Channel Enhancement Mode Field Effect Transistor

CET3055L Features

* 60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-S

CET3055L_Chino-ExcelTechnology.pdf

This datasheet PDF includes multiple part numbers: CET3055L, CET3055L_Chino. Please refer to the document for exact specifications by model.
CET3055L Datasheet Preview Page 2 CET3055L Datasheet Preview Page 3

Datasheet Details

Part number:

CET3055L, CET3055L_Chino

Manufacturer:

Chino-Excel Technology

File Size:

363.21 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: CET3055L, CET3055L_Chino.
Please refer to the document for exact specifications by model.

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TAGS

CET3055L CET3055L_Chino N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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