900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Chino-Excel Technology

CET04N10 Datasheet Preview

CET04N10 Datasheet

N-Channel MOSFET

No Preview Available !

CET04N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 3A, RDS(ON) = 200m@VGS = 10V.
RDS(ON) = 280m@VGS = 6V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D
DS
D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 3
IDM 12
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
www.DataSheet4U.com
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice.
1
Rev2. 2010.Sep.
http://www.cetsemi.com




Chino-Excel Technology

CET04N10 Datasheet Preview

CET04N10 Datasheet

N-Channel MOSFET

No Preview Available !

CET04N10
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2.6A
VGS = 6V, ID = 1.3A
VDS = 15V, ID = 2.6A
2
4V
160 200 m
200 280 m
3S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
385
85
pF
pF
Crss 25 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 1A,
VGS = 10V, RGEN = 22
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 2.1A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
11 22 ns
3 6 ns
33 66 ns
6 12 ns
9.2 12 nC
1.5 nC
2.7 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.85A
1.85 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
www.DataSheet4U.com
2


Part Number CET04N10
Description N-Channel MOSFET
Maker Chino-Excel Technology
PDF Download

CET04N10 Datasheet PDF






Similar Datasheet

1 CET04N10 N-Channel MOSFET
Chino-Excel Technology





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy