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CET04N10 - N-Channel MOSFET

Download the CET04N10 datasheet PDF. This datasheet also covers the CET04N10_Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D D G SOT-223 D S G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CET04N10_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CET04N10
Manufacturer Chino-Excel Technology
File Size 416.79 KB
Description N-Channel MOSFET
Datasheet download datasheet CET04N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CET04N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D D G SOT-223 D S G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 100 Units V V A A W C ±20 3 12 3 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W www.DataSheet4U.com Details are subject to change without notice. 1 Rev2. 2010.Sep. http://www.