CEM6200, CEM6200-Chino Datasheet - Chino-Excel Technology

CEM6200 N-Channel Enhancement Mode Field Effect Transistor

CEM6200 Features

* 60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

CEM6200, CEM6200-Chino Datasheet

CEM6200 Datasheet Preview — This datasheet PDF includes multiple part numbers: CEM6200, CEM6200-Chino. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CEM6200, CEM6200-Chino

Manufacturer:

Chino-Excel Technology

File Size:

402.30 KB

Description:

N-channel enhancement mode field effect transistor.

This datasheet PDF includes multiple part numbers: CEM6200, CEM6200-Chino.
Please refer to the document for exact specifications by model.

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CEM6200 CEM6200-Chino N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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