Datasheet4U Logo Datasheet4U.com

CEM4804 - Dual N-Channel Enhancement Mode Field Effect Transistor

Download the CEM4804 datasheet PDF. This datasheet also covers the CEM4804_Chino variant, as both devices belong to the same dual n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 30V , 7.9A , RDS(ON)=20mΩ @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. 1 2 3 4 D1 8 D1 7 D2 6 D2 5 SO-8 1 S1 G1 S2 G2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM4804_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM4804
Manufacturer Chino-Excel Technology
File Size 106.35 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM4804 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEM4804A Dual N-Channel MOSFET CET
CEM4808 Dual N-Channel Enhancement Mode Field Effect Transistor CET
CEM4042 N-Channel MOSFET VBsemi
CEM4063 p- CET
CEM4201 p- CET

Other Datasheets by Chino-Excel Technology

Part Number Description
CEM4800A N-Channel MOSFET
CEM4892 N-Channel MOSFET
CEM4042 N-Channel Enhancement Mode Field Effect Transistor
CEM4052 N-Channel Enhancement Mode Field Effect Transistor
CEM4204 N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) CEM4804 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 7.9A , RDS(ON)=20mΩ @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. 1 2 3 4 D1 8 D1 7 D2 6 D2 5 SO-8 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W C Ć20 Ć7.9 Ć24 2 2 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RįJA 62.