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CEM3032 - N-Channel Enhancement Mode Field Effect Transistor

Download the CEM3032 datasheet PDF (CEM3032-Chino included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement mode field effect transistor.

Features

  • 30V, 18A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM3032-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM3032
Manufacturer Chino-Excel Technology
File Size 561.44 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM3032 Datasheet

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Full PDF Text Transcription

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CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 18 IDM 72 Maximum Power Dissipation PD 2.
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