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Chimicron

CMESD9A05D Datasheet Preview

CMESD9A05D Datasheet

TVS

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Features
Transient protection for high-speed data lines
IEC 61000-4-2 (ESD) ±15kV (Air)
±8kV (Contact)
IEC 61000-4-4 (EFT) 40A (5/50 ns)
Cable Discharge Event (CDE)
Package optimized for high-speed lines
Ultra-small package (1.0mm 0.6mm 0.4mm)
Protects one data, control or power line
Low capacitance:0.5pF (Typical)
Low leakage current: 0.1μA @ VRWM (Typical)
Low clamping voltage
Each I/O pin can withstand over 1000 ESD
strikes for ±8kV contact discharge
Description
CMESD9A05D is a low-capacitance Transient Voltage
Suppressor (TVS) designed to provide electrostatic
discharge (ESD) protection for high-speed data
interfaces. With typical capacitance of 35pF only,
CMESD9A05D is designed to protect parasitic-sensitive
systems against over-voltage and over-current
transient events. It complies with IEC 61000-4-2
(ESD), Level 4 (±15kV air, ±8kV contact discharge),
IEC 61000-4-4 (electrical fast transient - EFT) (40A,
5/50 ns), very fast charged device model (CDM) ESD
and cable discharge event (CDE), etc.
Applications
Portable Electronics
Desktops, Servers and Notebooks
Cellular Phones
MP3 Ports
Digital Camera Ports
Mechanical Characteristics
SOD-923 package
Flammability Rating: UL 94V-0
Marking: Part number
Packaging: Tape and Reel
Circuit Diagram
I/O_1
I/O_2
Pin Configuration
12
SOD-923
(Top View)
TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD
Rev. 1. 3 Dec. 2012
www.chimicron.com info@chimicron.com
Page 1 of 4




Chimicron

CMESD9A05D Datasheet Preview

CMESD9A05D Datasheet

TVS

No Preview Available !

Absolute Maximum Rating
Symbol
VESD
TOPT
TSTG
Parameter
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Operating Temperature
Storage Temperature
Electrical Characteristics (T = 25C)
Symbol
Parameter
VRWM Nominal Reverse Working Voltage
IR Reverse Leakage Current @ VRWM
VBR Reverse Breakdown Voltage @ IT
IT Test Current for Reverse Breakdown
VC Clamping Voltage @ IPP
IPP Maximum Peak Pulse Current
CESD Parasitic Capacitance
VR Reverse Voltage
f Small Signal Frequency
Value
±30
±30
-55/+125
-55/+150
Units
kV
C
C
I
IPP
VC VBR VRWM
IIRT
IR
IT
VRWM VBR VC V
IPP
Bi-Directional TVS
Symbol
VRWM
IR
VBR
VC
VC
CESD
Test Condition
VRWM = 5V, T = 25C
Between I/O_1 and I/O_2
IT = 1mA
Between I/O_1 and I/O_2
IPP = 1A, tp = 8/20μs
Between I/O_1 and I/O_2
IPP = 4A, tp = 8/20μs
Between I/O_1 and I/O_2
VR = 0V, f = 1MHz
Between I/O_1 and I/O_2
Minimum Typical Maximum Units
5.0 V
0.1 1.0 μA
5.5 6.0 8.0 V
10 V
15 V
0.5 0.9 pF
TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD
Rev. 1. 3 Dec. 2012
www.chimicron.com info@chimicron.com
Page 2 of 4


Part Number CMESD9A05D
Description TVS
Maker Chimicron
PDF Download

CMESD9A05D Datasheet PDF






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