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HS1010E - N-Channel MOSFET

Description

The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.

2.

RDS(ON)≦9mΩ@VGS=10V Super high density cell design

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Datasheet Details

Part number HS1010E
Manufacturer Chengqi Semiconductor
File Size 656.16 KB
Description N-Channel MOSFET
Datasheet download datasheet HS1010E Datasheet

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HS1010E N channel 60V MOSFET 1. Description The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. 2. Feature ● RDS(ON)≦9mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability VDS RDS(on) ID 60 9 85 V mΩ A 3. Pin configuration Order Number HS1010E Package TO-220 TO-220 Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved. Oct,2012-Ver1.0 www.homsemi.com 1/5 Free Datasheet http://www.0PDF.com HS1010E N channel 60V MOSFET 4.
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