Datasheet4U Logo Datasheet4U.com

CMHD4150 - SURFACE MOUNT HIGH SPEED SWITCHING DIODE

General Description

The CENTRAL SEMICONDUCTOR CMHD4150 type is a high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CMHD457A LOW LEAKAGE SILICON DIODE Central Semiconductor
CMHD459A LOW LEAKAGE SILICON DIODE Central Semiconductor
CMHD21 SMD Common Mode Choke CHILISIN
CMH01 High Efficiency Rectifier Toshiba Semiconductor
CMH02 High Efficiency Rectifier Toshiba Semiconductor

Other Datasheets by Central Semiconductor

Part Number Description
CMHD4448 HIGH SPEED SWITCHING DIODE
CMHD2003 HIGH VOLTAGE SWITCHING DIODE
CMHD3595 LOW LEAKAGE SILICON DIODE
CMHSH-3 SURFACE MOUNT SCHOTTKY DIODE
CMHSH5-2L SURFACE MOUNT SCHOTTKY RECTIFIER 500mA/ 20 VOLTS LOW FORWARD VOLTAGE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CMHD4150 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD4150 type is a high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications. MARKING CODE: C50 SOD-123 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 50 50 250 250 4.0 1.0 400 -65 to +150 312.