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D44E3 - SILICON NPN DARLINGTON POWER TRANSISTORS

Download the D44E3 datasheet PDF. This datasheet also covers the D44E1 variant, as both devices belong to the same silicon npn darlington power transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The CENTRAL SEMICONDUCTOR D44E series devices are silicon NPN Darlington power transistors, manufactured by the epitaxial base process, with 2 integrated resistors and 1 diode for stability and protection.

These devices are designed for switching and output applications where high gain is desired.

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Note: The manufacturer provides a single datasheet file (D44E1-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
D44E1 D44E2 D44E3 SILICON NPN DARLINGTON POWER TRANSISTORS TO-220 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D44E series devices are silicon NPN Darlington power transistors, manufactured by the epitaxial base process, with 2 integrated resistors and 1 diode for stability and protection. These devices are designed for switching and output applications where high gain is desired. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEO VCES VEBO IC IB PD TJ, Tstg ΘJC D44E1 D44E2 D44E3 40 60 80 40 60 80 7.0 10 1.0 80 -65 to +150 1.
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